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| SMD Type MOS Field Effect Transistor 2SK3295 TO-263 Features 4.5 V drive available Low on-state resistance RDS(on)1 = 18 mU MAX. (VGS = 10 V, ID = 18 A) + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge QG = 16 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 Surface mount device available + .2 5 .2 8 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(pulse) * Total Power Dissipation (TA = 25 ) Total Power Dissipation (TC = 25 ) Channel Temperature Storage temperature * PW 10is,Dduty cycle 1%. Tch Tstg Symbol VDSS VGSS ID(DS) ID(pulse) PT Rating 20 20 35 140 1.5 35 150 -55 to +150 Unit V V A A W 5 .6 0 1 Gate 2 Drain 3 Source www.kexin.com.cn 1 SMD Type 2SK3295 Electrical Characteristics Ta = 25 Parameter Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V Transistors IC Min Typ Max 10 10 Unit iA iA V S VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 18 A 1.0 7.5 13 21 720 370 180 85 2000 65 270 2.5 RDS(on)1 VGS = 10 V, ID = 18 A RDS(on)2 VGS = 4.5 V, ID = 18 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 35 A IF = 35 A, VGS = 0 V IF = 35 A, VGS = 0 V di/dt = 100 A/ is VDS = 10 V VGS = 0 V f= 1 MHz VDD = 10 V , ID = 18 A VGS(on) = 10 V RG = 10 U 18 27 mU mU pF pF pF ns ns ns ns nC nC nC V ns nC 16 3.1 5.2 1.0 28 14 2 www.kexin.com.cn |
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